【南京南山半导体有限公司 — 长电贴片三极管选型资料】www.nscn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
A94 TRANSISTOR (PNP)
FEATURES
High voltage
==SOT-89-3L Plastic-Encapsulate Transistors ======= MAXIMUM RATINGS (Ta=25 unless otherwise noted) ℃ VCBO
VCEO
VEBO
IC
ICM
PC
TJ
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current Symbol V(BR) CBO V(BR) CEO V(BR) EBO ICBO ICEO IEBO
hFE(1)
hFE(2)
DC current gain
hFE(3)
hFE(4)
VCE (sat)
Collector-emitter saturation voltage
VCE (sat)
Base-emitter saturation voltage
Transition frequency VBE (sat) fT IC=-50mA, IBIC=-10mA, IB= -1mA VCE=-20V, IC=-10mA
f =30MHz -0.75 V VCE=-10V, ICVCE=-10V, ICTest conditions M IC= -100μA, IEIC= -1mA,IBIE=-100μA,ICVCB=-400V, IEμA VCE=-400V, IBμA VEB= -4V, ICμA VCE=-10V, ICVCE=-10V, ICIC=-10mA, IB
【南京南山半导体有限公司 — 长电贴片三极管选型资料】www.nscn.com.cnTypical CharacteristicsA94
Static Characteristic
-14
-12)Am( -10
CI TNE-8
RRU C -6ROTCE-4
LLOC-2-0
NOITARU)V
T(
A
S
t
a
sRE
EC
TV
T IME
EG-ART
OL
TOCVELLOC
)Am(
C
I TNERRUC ROTCELLOC)
Fp
( C ECNA
TICAPAC
-0.3-3REVERSE VOLTAGE V (V) h —— IAMBIENT TEMPERATURE Ta (℃)B,May,2012
The bottom gasket The file folder
Label on the Reel
Plastic bag 1000×1 PCS
The top gasket
Seal the box Stamp “EMPTY” on the empty box Seal the box QA Label Label on the Inner Box Inner Box: 210 mm× 208 mm×２０３ mmOuter Box: 440 mm× 440 mm× 230 mm